<?xml version="1.0" encoding="UTF-8"?>
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<title>Physics</title>
<link href="https://repository.ju.edu.et//handle/123456789/140" rel="alternate"/>
<subtitle/>
<id>https://repository.ju.edu.et//handle/123456789/140</id>
<updated>2026-04-04T11:41:52Z</updated>
<dc:date>2026-04-04T11:41:52Z</dc:date>
<entry>
<title>A 2d Monte Carlo Simulation of Diffusion in a Disorder Media</title>
<link href="https://repository.ju.edu.et//handle/123456789/10230" rel="alternate"/>
<author>
<name>Migbaru Bekele Birhanu</name>
</author>
<author>
<name>Solomon Negash</name>
</author>
<id>https://repository.ju.edu.et//handle/123456789/10230</id>
<updated>2026-03-12T12:44:29Z</updated>
<published>2024-01-18T00:00:00Z</published>
<summary type="text">A 2d Monte Carlo Simulation of Diffusion in a Disorder Media
Migbaru Bekele Birhanu; Solomon Negash
In this work, we present 2D Monte Carlo simulations of tracer in disorder media with&#13;
obstacles distributed randomly. For diffusion of a particle, the mean-square displace&#13;
ment of the diffusing species is linearly proportional to time for normal diffusion.&#13;
But in disordered systems anomalous diffusion occurs, in which the means square&#13;
displacement is proportional to a fractional power of time not equal to one.As the ob&#13;
stacle concentration approaches the percolation threshold, diffusion becomes more&#13;
anomalous for long times; the anomalous diffusion exponent increases.Simulation&#13;
data show anomalous for short times and normal for long times below percolation&#13;
threshold.Monte Carlo calculations are used to characterize anomalous diffusion for&#13;
obstacle concentrations between zero and the percolation threshold.In addition,above&#13;
percolation threshold anomalous for short times but for long time( t), &lt; r2 &gt; approx&#13;
imate fixed point proportional to mean value of boundary condition.,So the slope&#13;
oflog &lt; r2 &gt; /t versus logt goes to-1 and dw →.The intersection time from normal&#13;
to crowded diffusion is the crossover time tCR.
</summary>
<dc:date>2024-01-18T00:00:00Z</dc:date>
</entry>
<entry>
<title>Tuning Structural, Electronic,Magnetic and Optical  Properties of 2D-WX2 under Biaxial Strain and  Substitutional Doping in First Principles Method</title>
<link href="https://repository.ju.edu.et//handle/123456789/10071" rel="alternate"/>
<author>
<name>Mulugeta Shiferaw Woldesenbet</name>
</author>
<author>
<name>Menberu Mengesha</name>
</author>
<author>
<name>Nebiyu Gemechu</name>
</author>
<id>https://repository.ju.edu.et//handle/123456789/10071</id>
<updated>2025-11-07T08:16:45Z</updated>
<published>2024-06-11T00:00:00Z</published>
<summary type="text">Tuning Structural, Electronic,Magnetic and Optical  Properties of 2D-WX2 under Biaxial Strain and  Substitutional Doping in First Principles Method
Mulugeta Shiferaw Woldesenbet; Menberu Mengesha; Nebiyu Gemechu
Two dimensional (2D) WX2 for X= S, Se and Te in various supercell sizes are considered&#13;
 in monolayer and heterobilayer. The structural, electronic, magnetic, and optical properties&#13;
 of 2D- WX2 are investigated using density functional theory (DFT) with respect to a plane&#13;
 wave ultra-soft Pseudopotentials (PW-USPPs) and normconserving pseudopotentials (NCPPs)&#13;
 in a generalized gradient approximation (GGA) and the Hubbard correction (GGA + U) with&#13;
 the implementation of quantum espresso package. The optimized lattice parameters have been&#13;
 investigated interactively in each type of material. The band gaps for monolayer WTe2 are&#13;
 investigated for unstrained, 2% biaxial compressive and tensile strain to the slab of the mono&#13;
layer using GGA and GGA+U approximations. In GGA+U approximation, the energy band&#13;
 gap becomes slightly wider than with that of the GGA approximation. Monolayer WTe2 under&#13;
 biaxial compression exhibits an expanded energy band resulting in blue shift and in biaxial&#13;
 tension red shift by narrowing of the energy band gap in comparison to the equilibrium.&#13;
 Pristine WSe2 monolayer is identified as a nonmagnetic direct band gap semiconductor with&#13;
 a band gap of 1.55 eV. Upon substituting Mn for W in the WSe2 monolayer, the resulting&#13;
 structure exhibits enhanced stability, indicated by a negative formation energy. The Mn doped&#13;
 monolayer of WSe2 has slightly shorter bond length with 2.4294 ˚A than the pure with 2.5405 ˚A&#13;
 for the Mn-Se and W-Se respectively. The doped system becomes FM and total magnetic mo&#13;
ment within the nearest neighboring interactions of the impurity atoms increases notably and it&#13;
 is attributed to the electron-correlation effect in the high spin state under the GGA+U approx&#13;
imation. However, this correlation effect proves insignificant on the total magnetic moment&#13;
 for the second nearest neighboring interactions, yielding consistent outcomes in both GGA and&#13;
 GGA+U approximations. The transition of FM to AFM state occurs above room temperature&#13;
 for low impurity concentration, 443 k and 450 k for 8% and 12.5% substitution with Mn re&#13;
spectively. This indicates long-range FM ordering and crucial for high-temperature 2D-diluted&#13;
 magnetic semiconductors. However, at high concentrations of impurity atoms, the temperature&#13;
 drops below room temperature (220 K in 22.2%) in the doped monolayer WSe2, showing weak&#13;
 magnetic interaction. Lastly, the optical property of a doped system is studied by applying&#13;
 polarization in perpendicular and parallel directions to the plane of the monolayer.&#13;
 For two-dimensional WS2/WSe2 hetero structure lattice constant and the vertical interlayer&#13;
 distance between slabs are a=3.28 ˚A andc=13.14 ˚Arespectively. The bandgapsforWS2/WSe2&#13;
 hetero structure are investigated for unstrained, (0-4)% biaxial compression and tension using&#13;
 GGA approximations. Direct band gap of 0.51eV is obtained for unstrained heterostructure.&#13;
 The band gap value of the heterobilayer is affected by the application of strain. When the&#13;
 heterobilayer is imposed to biaxial compression the band gap value increases. However, the&#13;
 tensile stress results in reducing the band gap value of the heterobilayer and the system attains&#13;
 its metallic or semimetalic state at 4% biaxial tensile strain. Tunability of the band gap is very&#13;
 viii&#13;
crucial in developing photovoltaic and optoelectronic devices. The strained heterostructure&#13;
 shows different optical property when it is under biaxial tension and compression due to the&#13;
 change in the values of the band gap. The heterobilayer has also high absorption coefficient in&#13;
 the visible light spectrum which makes it a promising material for photovoltaic applications.
</summary>
<dc:date>2024-06-11T00:00:00Z</dc:date>
</entry>
<entry>
<title>Tuning Structural, Electronic,Magnetic and Optical  Properties of 2D-WX2 under Biaxial Strain and  Substitutional Doping in First Principles Method</title>
<link href="https://repository.ju.edu.et//handle/123456789/10070" rel="alternate"/>
<author>
<name>Mulugeta Shiferaw Woldesenbet</name>
</author>
<author>
<name>Menberu Mengesha</name>
</author>
<author>
<name>Nebiyu Gemechu</name>
</author>
<id>https://repository.ju.edu.et//handle/123456789/10070</id>
<updated>2025-11-07T08:07:42Z</updated>
<published>2024-06-11T00:00:00Z</published>
<summary type="text">Tuning Structural, Electronic,Magnetic and Optical  Properties of 2D-WX2 under Biaxial Strain and  Substitutional Doping in First Principles Method
Mulugeta Shiferaw Woldesenbet; Menberu Mengesha; Nebiyu Gemechu
Two dimensional (2D) WX2 for X= S, Se and Te in various supercell sizes are considered&#13;
 in monolayer and heterobilayer. The structural, electronic, magnetic, and optical properties&#13;
 of 2D- WX2 are investigated using density functional theory (DFT) with respect to a plane&#13;
 wave ultra-soft Pseudopotentials (PW-USPPs) and normconserving pseudopotentials (NCPPs)&#13;
 in a generalized gradient approximation (GGA) and the Hubbard correction (GGA + U) with&#13;
 the implementation of quantum espresso package. The optimized lattice parameters have been&#13;
 investigated interactively in each type of material. The band gaps for monolayer WTe2 are&#13;
 investigated for unstrained, 2% biaxial compressive and tensile strain to the slab of the mono&#13;
layer using GGA and GGA+U approximations. In GGA+U approximation, the energy band&#13;
 gap becomes slightly wider than with that of the GGA approximation. Monolayer WTe2 under&#13;
 biaxial compression exhibits an expanded energy band resulting in blue shift and in biaxial&#13;
 tension red shift by narrowing of the energy band gap in comparison to the equilibrium.&#13;
 Pristine WSe2 monolayer is identified as a nonmagnetic direct band gap semiconductor with&#13;
 a band gap of 1.55 eV. Upon substituting Mn for W in the WSe2 monolayer, the resulting&#13;
 structure exhibits enhanced stability, indicated by a negative formation energy. The Mn doped&#13;
 monolayer of WSe2 has slightly shorter bond length with 2.4294 ˚A than the pure with 2.5405 ˚A&#13;
 for the Mn-Se and W-Se respectively. The doped system becomes FM and total magnetic mo&#13;
ment within the nearest neighboring interactions of the impurity atoms increases notably and it&#13;
 is attributed to the electron-correlation effect in the high spin state under the GGA+U approx&#13;
imation. However, this correlation effect proves insignificant on the total magnetic moment&#13;
 for the second nearest neighboring interactions, yielding consistent outcomes in both GGA and&#13;
 GGA+U approximations. The transition of FM to AFM state occurs above room temperature&#13;
 for low impurity concentration, 443 k and 450 k for 8% and 12.5% substitution with Mn re&#13;
spectively. This indicates long-range FM ordering and crucial for high-temperature 2D-diluted&#13;
 magnetic semiconductors. However, at high concentrations of impurity atoms, the temperature&#13;
 drops below room temperature (220 K in 22.2%) in the doped monolayer WSe2, showing weak&#13;
 magnetic interaction. Lastly, the optical property of a doped system is studied by applying&#13;
 polarization in perpendicular and parallel directions to the plane of the monolayer.&#13;
 For two-dimensional WS2/WSe2 hetero structure lattice constant and the vertical interlayer&#13;
 distance between slabs are a=3.28 ˚A andc=13.14 ˚Arespectively. The bandgapsforWS2/WSe2&#13;
 hetero structure are investigated for unstrained, (0-4)% biaxial compression and tension using&#13;
 GGA approximations. Direct band gap of 0.51eV is obtained for unstrained heterostructure.&#13;
 The band gap value of the heterobilayer is affected by the application of strain. When the&#13;
 heterobilayer is imposed to biaxial compression the band gap value increases. However, the&#13;
 tensile stress results in reducing the band gap value of the heterobilayer and the system attains&#13;
 its metallic or semimetalic state at 4% biaxial tensile strain. Tunability of the band gap is very&#13;
 viii&#13;
crucial in developing photovoltaic and optoelectronic devices. The strained heterostructure&#13;
 shows different optical property when it is under biaxial tension and compression due to the&#13;
 change in the values of the band gap. The heterobilayer has also high absorption coefficient in&#13;
 the visible light spectrum which makes it a promising material for photovoltaic applications
</summary>
<dc:date>2024-06-11T00:00:00Z</dc:date>
</entry>
<entry>
<title>Electronic and structural properties of Magnesium dibo ride using density Functional theory</title>
<link href="https://repository.ju.edu.et//handle/123456789/10056" rel="alternate"/>
<author>
<name>Tesfa Mosisa</name>
</author>
<author>
<name>Menberu Mengesha</name>
</author>
<author>
<name>Nebiyu Gemechu</name>
</author>
<id>https://repository.ju.edu.et//handle/123456789/10056</id>
<updated>2025-11-06T12:55:37Z</updated>
<published>2025-01-06T00:00:00Z</published>
<summary type="text">Electronic and structural properties of Magnesium dibo ride using density Functional theory
Tesfa Mosisa; Menberu Mengesha; Nebiyu Gemechu
In this thesis, electronic and structural properties of Magnesium diboride (MgB2) is investi&#13;
gated with the density functional theory by using Quantum EPRESSO Package. The gener&#13;
alized gradient approximation (GGA) is used to compute the exchange correlation energy. The&#13;
 total energy of Magnesium diboride is computed as a function of cutoff energy and Monk Horst&#13;
pack grid size. The results show that the total energy per cell is monotonically decreasing with&#13;
 increasing cutoff energy and converged at 70Ry plane wave cutoff energy and the ground state&#13;
 energy has its minimumat-130.58056956 Ry. Thetotal energy of MgB2 percellhasconverged&#13;
 at 11 × 11 ×9k-point grids with a ground state energy of-130.31353522 Ry. Besides, the opti&#13;
mized lattice constants of bulk MgB2 have been determined to be a = 5.8 Bohr and hence, c =&#13;
 6.669288 Bohr with respect to our computational calculation. The experimental values of bulk&#13;
 HCP Magnesium diboride are a = 5.808413 Bohr and c = 6.678954 Bohr. The lattice constant&#13;
 determined using DFT calculation is compatible with an experimental result with a relative er&#13;
ror of 0.00144. Finally, the band structure and density of state of HCP magnesium diboride are&#13;
 computed. The band structure calculation shows that there is overlap between the conduction&#13;
 band and the valance band. This clearly shows that MgB2 is conductor or metal (zero band&#13;
 gap material). The density of state also shows that there is no discontinuity before and after the&#13;
 Fermi Level. The density of state is continuous and there is no an insulating regime.
</summary>
<dc:date>2025-01-06T00:00:00Z</dc:date>
</entry>
</feed>
