Investigation of recombination lifetime of gallium antimonide through different recombination processes in particular of Auger recombination process

Abstract

Recombination of electrons and holes may take place in the host crystal or at impurity Cen tre’s, the energy being removed by radiation of a light quantum, by multi phonon emission, or by an Auger process. The investigation of recombination lifetime of gallium antimonide (GaSb) using the Van Roosbroeck-Shockley method is crucial for understanding the materi als performance in optoelectronic devices such as photo detectors, infrared LEDs, and lasers. GaSb is a narrow band gap semiconductor with unique electronic and optical properties. It is highly effective in mid infrared applications due to its small band gap. The recombination life time in GaSb significantly influences its device efficiency by determining the carrier dynamics. The van Roosbroeck–Shockley method provides a framework to calculate recombination rate and recombination lifetime of GaSb based on radiative recombination process. The band gap energy variation of GaSb as a function of wave vector k were calculated. The result shows that the band gap energy of GaSb increases with increasing of wave vector k and also decrease with increasing of temperature. Absorption and emission rate are both calculated since emission rate is decreased with increasing photon energy that emitted the absorption rate is increased with increasing photon energy. The recombination rate was calculated by pointing different dependencies. At the last the recombination lifetime of GaSb were calculated by using differ ent recombination mechanisms. The radiative recombination lifetime is longer than the Auger recombination lifetime. Keywords: Gallium Antimonide (GaSb), Van Roosbroeck-Shockley method, recombination rate, emission rate, absorption rate, recombination, recombination pro cess