Electroluminescence from gan nanostructures

Abstract

When crystals are constructed on a smaller scale (nanometeric scale), the energy gap between the highest occupied molecular orbital and the lowest unoccupied molecular orbital increased. In this thesis, quantum confinement, energy gap, exciton, optical and electrical properties of GaN-ncs were discussed. This work focuses on the study of Electroluminescence (EL) intensity of GaN nanoclusters as a function of different parameters. The dependence of EL intensity of GaN-ncs, on parameters like size of the nanocluster, applied voltage, wavelength, temperature, and time were briefly analyzed. It is shown that as the number of nanoclusters decreases, higher EL intensity is obtained and light emission starts at lower threshold. However selecting the number of samples is based on the applied voltage and wavelength. The high efficient EL is obtained at low operating voltages (about 6V ), it is also observed that EL degrades with time. To get our result, we designed computational method and used the idea of quantum confinement model (QCM) and developed model equation that describes the EL intensity as a function of size of the nanoclusters and Fourier transform of the size dependent intensity into energy dependent intensity equations were derived and MATLAB codes were developed to generate data. We computed the data and plotted their graphs in different legends to have a comparative analysis between our results and some experimental results reported in literature. Most of our results agree with experimental results.