Photoluminescence from gaas nanostructures

Abstract

The confinement properties of semiconductor nanostructures has promising potential in technological application. Such application originated from the features confined nanostructures,that could be analysed thought a mechanism PL spectroscopy which probed different properties of materials. The main objective of this study is to describe the dependence of PL intensity on optical parameters temperature,time decay,absorption and emission(wavelength) and photon energy semiconductor nanostructures of unstrained and intrinsic GaAs quantum dots. The theoretical and practical model equations were numerically analyzed and simulated with matlab and fortan 90 codes to drawn an agreement with supposed theoretical and experimental values. The experimental fitted values and physical properties of materials were used as data source for our simulation. We reached with conclusion at low temperature the peak is quite sharp, as temperature increases we observed the PL intensity decreased and got quenched at particular thermal energy. As photon energy increases the peak broadens shifts to the lower energy. As the wavelength increases PL intensity decrease. At the mean value diameter 10nm PL intensity reach peaks while the diameter increasses exceeding mean value of diameter PL intensity decreases. Such that our simulation result made agreement with theoretical supposition.