Abstract:
Self-heating effects and short channel effects are unappealing side effects of multigate devices like gate-all-around nanowire-field effect transistors (FETs) and fin FETs, limiting their performance and posing reliability difficulties. This paper proposes the use of
the novel nanosheet FET (NsFET) for complementary metal-oxide semiconductor technology nodes that are changing. Design
guidelines and basic measurements for the sub-nm node are displayed alongside a brief introduction to the roadmap to the sub-nm
regime and electronic market. The device had an ION/IOFF ratio of more than 105
, according to the proposed silicon-based NsFET.
For low-power and high-switching applications, the results were verified and achieved quite well. When an NS width increases,
although, the threshold voltage (Vth) tends to fall, resulting in a loss in subthreshold effectiveness. Furthermore, the proposed
device performance, like subthreshold swing ION/IOFF, was studied with a conventional 2D FET. Hence, the proposed NsFET can
be a frontrunner for ultra-low power and high-speed switching applications.
