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Design and Analysis of Nanosheet Field-Effect Transistor for High-Speed Switching Applications

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dc.contributor.author Kumar, Ravi
dc.contributor.author Kumar, E. Sathish
dc.contributor.author Vijayalakshmi, S.
dc.contributor.author Prasad, Dumpa
dc.contributor.author Mohamedyaseen, A.
dc.contributor.author Choubey, Shruti Bhargava
dc.contributor.author Vignesh, N. Arun
dc.contributor.author Santhosh, A. Johnson
dc.date.accessioned 2023-11-23T12:33:00Z
dc.date.available 2023-11-23T12:33:00Z
dc.date.issued 2023-07-24
dc.identifier.uri https://repository.ju.edu.et//handle/123456789/8897
dc.description.abstract Self-heating effects and short channel effects are unappealing side effects of multigate devices like gate-all-around nanowire-field effect transistors (FETs) and fin FETs, limiting their performance and posing reliability difficulties. This paper proposes the use of the novel nanosheet FET (NsFET) for complementary metal-oxide semiconductor technology nodes that are changing. Design guidelines and basic measurements for the sub-nm node are displayed alongside a brief introduction to the roadmap to the sub-nm regime and electronic market. The device had an ION/IOFF ratio of more than 105 , according to the proposed silicon-based NsFET. For low-power and high-switching applications, the results were verified and achieved quite well. When an NS width increases, although, the threshold voltage (Vth) tends to fall, resulting in a loss in subthreshold effectiveness. Furthermore, the proposed device performance, like subthreshold swing ION/IOFF, was studied with a conventional 2D FET. Hence, the proposed NsFET can be a frontrunner for ultra-low power and high-speed switching applications. en_US
dc.language.iso en_US en_US
dc.title Design and Analysis of Nanosheet Field-Effect Transistor for High-Speed Switching Applications en_US
dc.type Article en_US

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